IRF6626TR1
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Infineon Technologies IRF6626TR1

Manufacturer No:
IRF6626TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6626TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 16A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2380 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
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Similar Products

Part Number IRF6626TR1 IRF6636TR1   IRF6646TR1   IRF6616TR1   IRF6620TR1   IRF6621TR1   IRF6623TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 80 V 30 V 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 72A (Tc) 18A (Ta), 81A (Tc) 12A (Ta), 68A (Tc) 19A (Ta), 106A (Tc) 27A (Ta), 150A (Tc) 12A (Ta), 55A (Tc) 16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 16A, 10V 4.5mOhm @ 18A, 10V 9.5mOhm @ 12A, 10V 5mOhm @ 19A, 10V 2.7mOhm @ 27A, 10V 9.1mOhm @ 12A, 10V 5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA 2.45V @ 250µA 4.9V @ 150µA 2.25V @ 250µA 2.45V @ 250µA 2.25V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V 27 nC @ 4.5 V 50 nC @ 10 V 44 nC @ 4.5 V 42 nC @ 4.5 V 17.5 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2380 pF @ 15 V 2420 pF @ 10 V 2060 pF @ 25 V 3765 pF @ 20 V 4130 pF @ 10 V 1460 pF @ 15 V 1360 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 1.4W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ ST DIRECTFET™ ST DIRECTFET™ MN DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ SQ DIRECTFET™ ST
Package / Case DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFET™ Isometric MN DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric SQ DirectFET™ Isometric ST

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