IRF6623TR1
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Infineon Technologies IRF6623TR1

Manufacturer No:
IRF6623TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6623TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 16A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
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Similar Products

Part Number IRF6623TR1 IRF6626TR1   IRF6633TR1   IRF6603TR1   IRF6613TR1   IRF6620TR1   IRF6621TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 30 V 40 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 55A (Tc) 16A (Ta), 72A (Tc) 16A (Ta), 59A (Tc) 27A (Ta), 92A (Tc) 23A (Ta), 150A (Tc) 27A (Ta), 150A (Tc) 12A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 15A, 10V 5.4mOhm @ 16A, 10V 5.6mOhm @ 16A, 10V 3.4mOhm @ 25A, 10V 3.4mOhm @ 23A, 10V 2.7mOhm @ 27A, 10V 9.1mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.35V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.25V @ 250µA 2.45V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 29 nC @ 4.5 V 17 nC @ 4.5 V 72 nC @ 4.5 V 63 nC @ 4.5 V 42 nC @ 4.5 V 17.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V +20V, -12V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 10 V 2380 pF @ 15 V 1250 pF @ 10 V 6590 pF @ 15 V 5950 pF @ 15 V 4130 pF @ 10 V 1460 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.4W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ ST DIRECTFET™ ST DIRECTFET™ MP DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ SQ
Package / Case DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFET™ Isometric MP DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric SQ

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