IRF6620TRPBF
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Infineon Technologies IRF6620TRPBF

Manufacturer No:
IRF6620TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6620TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 27A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4130 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Part Number IRF6620TRPBF IRF6623TRPBF   IRF6621TRPBF   IRF6626TRPBF   IRF6628TRPBF   IRF6629TRPBF   IRF6622TRPBF   IRF6610TRPBF   IRF6620TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 30 V 25 V 25 V 25 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 150A (Tc) 16A (Ta), 55A (Tc) 12A (Ta), 55A (Tc) 16A (Ta), 72A (Tc) 27A (Ta), 160A (Tc) 29A (Ta), 180A (Tc) 15A (Ta), 59A (Tc) 15A (Ta), 66A (Tc) 27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 27A, 10V 5.7mOhm @ 15A, 10V 9.1mOhm @ 12A, 10V 5.4mOhm @ 16A, 10V 2.5mOhm @ 27A, 10V 2.1mOhm @ 29A, 10V 6.3mOhm @ 15A, 10V 6.8mOhm @ 15A, 10V 2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.2V @ 250µA 2.25V @ 250µA 2.35V @ 250µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 25µA 2.55V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V 17 nC @ 4.5 V 17.5 nC @ 4.5 V 29 nC @ 4.5 V 47 nC @ 4.5 V 51 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 42 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4130 pF @ 10 V 1360 pF @ 10 V 1460 pF @ 15 V 2380 pF @ 15 V 3770 pF @ 15 V 4260 pF @ 13 V 1450 pF @ 13 V 1520 pF @ 10 V 4130 pF @ 10 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 1.4W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 96W (Tc) 2.8W (Ta), 100W (Tc) 2.2W (Ta), 34W (Tc) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ SQ DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ SQ DIRECTFET™ SQ DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric SQ DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric SQ DirectFET™ Isometric SQ DirectFET™ Isometric MX

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