IRF6618
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Infineon Technologies IRF6618

Manufacturer No:
IRF6618
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6618 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5640 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
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Similar Products

Part Number IRF6618 IRF6619   IRF6678   IRF6608   IRF6611   IRF6614   IRF6616  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 30 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 170A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 150A (Tc) 13A (Ta), 55A (Tc) 32A (Ta), 150A (Tc) 12.7A (Ta), 55A (Tc) 19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 9mOhm @ 13A, 10V 2.6mOhm @ 27A, 10V 8.3mOhm @ 12.7A, 10V 5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA 2.45V @ 250µA 2.25V @ 250µA 3V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 4.5 V 57 nC @ 4.5 V 65 nC @ 4.5 V 24 nC @ 4.5 V 56 nC @ 4.5 V 29 nC @ 4.5 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±12V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5640 pF @ 15 V 5040 pF @ 10 V 5640 pF @ 15 V 2120 pF @ 15 V 4860 pF @ 15 V 2560 pF @ 20 V 3765 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 3.9W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MX
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MX

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