IRF6616
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Infineon Technologies IRF6616

Manufacturer No:
IRF6616
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6616 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 19A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3765 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6616 IRF6619   IRF6618   IRF6626   IRF6636   IRF6611   IRF6614  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 20 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 106A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 170A (Tc) 16A (Ta), 72A (Tc) 18A (Ta), 81A (Tc) 32A (Ta), 150A (Tc) 12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 19A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 5.4mOhm @ 16A, 10V 4.5mOhm @ 18A, 10V 2.6mOhm @ 27A, 10V 8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.35V @ 250µA 2.45V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 57 nC @ 4.5 V 65 nC @ 4.5 V 29 nC @ 4.5 V 27 nC @ 4.5 V 56 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3765 pF @ 20 V 5040 pF @ 10 V 5640 pF @ 15 V 2380 pF @ 15 V 2420 pF @ 10 V 4860 pF @ 15 V 2560 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.2W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 3.9W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ ST
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric ST

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