IRF6612TR1
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Infineon Technologies IRF6612TR1

Manufacturer No:
IRF6612TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6612TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 24A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3970 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
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Similar Products

Part Number IRF6612TR1 IRF6619TR1   IRF6618TR1   IRF6617TR1   IRF6613TR1   IRF6616TR1   IRF6614TR1   IRF6610TR1   IRF6611TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 40 V 30 V 40 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 136A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 170A (Tc) 14A (Ta), 55A (Tc) 23A (Ta), 150A (Tc) 19A (Ta), 106A (Tc) 12.7A (Ta), 55A (Tc) 15A (Ta), 66A (Tc) 32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 24A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 8.1mOhm @ 15A, 10V 3.4mOhm @ 23A, 10V 5mOhm @ 19A, 10V 8.3mOhm @ 12.7A, 10V 6.8mOhm @ 15A, 10V 2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.35V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.55V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V 57 nC @ 4.5 V 65 nC @ 4.5 V 17 nC @ 4.5 V 63 nC @ 4.5 V 44 nC @ 4.5 V 29 nC @ 4.5 V 17 nC @ 4.5 V 56 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3970 pF @ 15 V 5040 pF @ 10 V 5640 pF @ 15 V 1300 pF @ 15 V 5950 pF @ 15 V 3765 pF @ 20 V 2560 pF @ 20 V 1520 pF @ 10 V 4860 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.2W (Ta), 42W (Tc) 3.9W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ SQ DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric SQ DirectFET™ Isometric MX

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