IRF6610TR1
  • Share:

Infineon Technologies IRF6610TR1

Manufacturer No:
IRF6610TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6610TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 15A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SQ
Package / Case:DirectFET™ Isometric SQ
0 Remaining View Similar

In Stock

-
418

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6610TR1 IRF6619TR1   IRF6618TR1   IRF6612TR1   IRF6617TR1   IRF6620TR1   IRF6613TR1   IRF6611TR1   IRF6616TR1   IRF6614TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 30 V 30 V 20 V 40 V 30 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 66A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 170A (Tc) 24A (Ta), 136A (Tc) 14A (Ta), 55A (Tc) 27A (Ta), 150A (Tc) 23A (Ta), 150A (Tc) 32A (Ta), 150A (Tc) 19A (Ta), 106A (Tc) 12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 15A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 3.3mOhm @ 24A, 10V 8.1mOhm @ 15A, 10V 2.7mOhm @ 27A, 10V 3.4mOhm @ 23A, 10V 2.6mOhm @ 27A, 10V 5mOhm @ 19A, 10V 8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.25V @ 250µA 2.35V @ 250µA 2.45V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 57 nC @ 4.5 V 65 nC @ 4.5 V 45 nC @ 4.5 V 17 nC @ 4.5 V 42 nC @ 4.5 V 63 nC @ 4.5 V 56 nC @ 4.5 V 44 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 10 V 5040 pF @ 10 V 5640 pF @ 15 V 3970 pF @ 15 V 1300 pF @ 15 V 4130 pF @ 10 V 5950 pF @ 15 V 4860 pF @ 15 V 3765 pF @ 20 V 2560 pF @ 20 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 3.9W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SQ DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ ST
Package / Case DirectFET™ Isometric SQ DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric ST

Related Product By Categories

NTP165N65S3H
NTP165N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STH270N4F3-2
STH270N4F3-2
STMicroelectronics
MOSFET N-CH 40V 180A H2PAK
IRFB9N60APBF
IRFB9N60APBF
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO220AB
PJS6414_S1_00001
PJS6414_S1_00001
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
DMN6040SFDEQ-7
DMN6040SFDEQ-7
Diodes Incorporated
MOSFET N-CH 60V 5.3A 6UDFN
APT5017SVRG
APT5017SVRG
Microchip Technology
MOSFET N-CH 500V 30A D3PAK
APT6013JFLL
APT6013JFLL
Microchip Technology
MOSFET N-CH 600V 39A ISOTOP
IRF820STRL
IRF820STRL
Vishay Siliconix
MOSFET N-CH 500V 2.5A D2PAK
IRF840AL
IRF840AL
Vishay Siliconix
MOSFET N-CH 500V 8A I2PAK
IRFR1N60ATR
IRFR1N60ATR
Vishay Siliconix
MOSFET N-CH 600V 1.4A DPAK
BSS139 E6327
BSS139 E6327
Infineon Technologies
MOSFET N-CH 250V 100MA SOT23-3
PHB11N06LT,118
PHB11N06LT,118
NXP USA Inc.
MOSFET N-CH 55V 10.3A D2PAK

Related Product By Brand

IGCM06G60GAXKMA1
IGCM06G60GAXKMA1
Infineon Technologies
IGBT 600V 24MDIP
IRF7380TRPBF
IRF7380TRPBF
Infineon Technologies
MOSFET 2N-CH 80V 3.6A 8-SOIC
IRF7488PBF
IRF7488PBF
Infineon Technologies
MOSFET N-CH 80V 6.3A 8SO
IRF6631TRPBF
IRF6631TRPBF
Infineon Technologies
MOSFET N-CH 30V 13A DIRECTFET
IRG4PC50WPBF
IRG4PC50WPBF
Infineon Technologies
IGBT 600V 55A 200W TO247AC
TC277TP64F200NDCKXUMA3
TC277TP64F200NDCKXUMA3
Infineon Technologies
IC MCU 32BIT 4MB FLASH 292LFBGA
IRS2330JPBF
IRS2330JPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 44PLCC
CY90347DASPFV-GS-495E1
CY90347DASPFV-GS-495E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90387PMT-G-210-JNE1
MB90387PMT-G-210-JNE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
S29GL128S90FHSS23
S29GL128S90FHSS23
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
CY7S1061GE30-10BVM
CY7S1061GE30-10BVM
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
CY39C831QN-G-ERE2
CY39C831QN-G-ERE2
Infineon Technologies
IC REG BUCK ENERGY HARVEST 40QFN