IRF6610TR1
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Infineon Technologies IRF6610TR1

Manufacturer No:
IRF6610TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6610TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 15A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SQ
Package / Case:DirectFET™ Isometric SQ
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Similar Products

Part Number IRF6610TR1 IRF6619TR1   IRF6618TR1   IRF6612TR1   IRF6617TR1   IRF6620TR1   IRF6613TR1   IRF6611TR1   IRF6616TR1   IRF6614TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 30 V 30 V 20 V 40 V 30 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 66A (Tc) 30A (Ta), 150A (Tc) 30A (Ta), 170A (Tc) 24A (Ta), 136A (Tc) 14A (Ta), 55A (Tc) 27A (Ta), 150A (Tc) 23A (Ta), 150A (Tc) 32A (Ta), 150A (Tc) 19A (Ta), 106A (Tc) 12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 15A, 10V 2.2mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V 3.3mOhm @ 24A, 10V 8.1mOhm @ 15A, 10V 2.7mOhm @ 27A, 10V 3.4mOhm @ 23A, 10V 2.6mOhm @ 27A, 10V 5mOhm @ 19A, 10V 8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.25V @ 250µA 2.35V @ 250µA 2.45V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 57 nC @ 4.5 V 65 nC @ 4.5 V 45 nC @ 4.5 V 17 nC @ 4.5 V 42 nC @ 4.5 V 63 nC @ 4.5 V 56 nC @ 4.5 V 44 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 10 V 5040 pF @ 10 V 5640 pF @ 15 V 3970 pF @ 15 V 1300 pF @ 15 V 4130 pF @ 10 V 5950 pF @ 15 V 4860 pF @ 15 V 3765 pF @ 20 V 2560 pF @ 20 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 3.9W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SQ DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ ST DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ MX DIRECTFET™ ST
Package / Case DirectFET™ Isometric SQ DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric ST DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric MX DirectFET™ Isometric ST

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