IRF6609
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Infineon Technologies IRF6609

Manufacturer No:
IRF6609
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6609 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 31A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6290 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
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Similar Products

Part Number IRF6609 IRF6619   IRF6601   IRF6602   IRF6603   IRF6607   IRF6608  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc) 30A (Ta), 150A (Tc) 26A (Ta), 85A (Tc) 11A (Ta), 48A (Tc) 27A (Ta), 92A (Tc) 27A (Ta), 94A (Tc) 13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 7V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 31A, 10V 2.2mOhm @ 30A, 10V 3.8mOhm @ 26A, 10V 13mOhm @ 11A, 10V 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V 9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.45V @ 250µA 2.2V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 4.5 V 57 nC @ 4.5 V 45 nC @ 4.5 V 18 nC @ 4.5 V 72 nC @ 4.5 V 75 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V +20V, -12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 6290 pF @ 10 V 5040 pF @ 10 V 3440 pF @ 15 V 1420 pF @ 10 V 6590 pF @ 15 V 6930 pF @ 15 V 2120 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) - - -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MX DIRECTFET™ MT DIRECTFET™ MQ DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ ST
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MX DirectFET™ Isometric MT DirectFET™ Isometric MQ DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric ST

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