IRF6608
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Infineon Technologies IRF6608

Manufacturer No:
IRF6608
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6608 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 13A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2120 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
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Similar Products

Part Number IRF6608 IRF6618   IRF6609   IRF6601   IRF6602   IRF6603   IRF6607  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 20 V 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 55A (Tc) 30A (Ta), 170A (Tc) 31A (Ta), 150A (Tc) 26A (Ta), 85A (Tc) 11A (Ta), 48A (Tc) 27A (Ta), 92A (Tc) 27A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 7V
Rds On (Max) @ Id, Vgs 9mOhm @ 13A, 10V 2.2mOhm @ 30A, 10V 2mOhm @ 31A, 10V 3.8mOhm @ 26A, 10V 13mOhm @ 11A, 10V 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.35V @ 250µA 2.45V @ 250µA 2.2V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 65 nC @ 4.5 V 69 nC @ 4.5 V 45 nC @ 4.5 V 18 nC @ 4.5 V 72 nC @ 4.5 V 75 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±20V ±20V ±20V +20V, -12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 15 V 5640 pF @ 15 V 6290 pF @ 10 V 3440 pF @ 15 V 1420 pF @ 10 V 6590 pF @ 15 V 6930 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 1.8W (Ta), 89W (Tc) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) - - -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ MQ DIRECTFET™ MT DIRECTFET™ MT
Package / Case DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric MQ DirectFET™ Isometric MT DirectFET™ Isometric MT

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