IRF6607TR1
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Infineon Technologies IRF6607TR1

Manufacturer No:
IRF6607TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6607TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 27A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:6930 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
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Similar Products

Part Number IRF6607TR1 IRF6608TR1   IRF6609TR1   IRF6617TR1   IRF6637TR1   IRF6603TR1   IRF6604TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 94A (Tc) 13A (Ta), 55A (Tc) 31A (Ta), 150A (Tc) 14A (Ta), 55A (Tc) 14A (Ta), 59A (Tc) 27A (Ta), 92A (Tc) 12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 7V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V 9mOhm @ 13A, 10V 2mOhm @ 31A, 10V 8.1mOhm @ 15A, 10V 7.7mOhm @ 14A, 10V 3.4mOhm @ 25A, 10V 11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.35V @ 250µA 2.5V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 4.5 V 24 nC @ 4.5 V 69 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 72 nC @ 4.5 V 26 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V +20V, -12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 6930 pF @ 15 V 2120 pF @ 15 V 6290 pF @ 10 V 1300 pF @ 15 V 1330 pF @ 15 V 6590 pF @ 15 V 2270 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 1.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MP DIRECTFET™ MT DIRECTFET™ MQ
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MP DirectFET™ Isometric MT DirectFET™ Isometric MQ

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