IRF6607TR1
  • Share:

Infineon Technologies IRF6607TR1

Manufacturer No:
IRF6607TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6607TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 27A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:6930 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
0 Remaining View Similar

In Stock

-
47

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6607TR1 IRF6608TR1   IRF6609TR1   IRF6617TR1   IRF6637TR1   IRF6603TR1   IRF6604TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 94A (Tc) 13A (Ta), 55A (Tc) 31A (Ta), 150A (Tc) 14A (Ta), 55A (Tc) 14A (Ta), 59A (Tc) 27A (Ta), 92A (Tc) 12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 7V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V 9mOhm @ 13A, 10V 2mOhm @ 31A, 10V 8.1mOhm @ 15A, 10V 7.7mOhm @ 14A, 10V 3.4mOhm @ 25A, 10V 11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA 2.45V @ 250µA 2.35V @ 250µA 2.35V @ 250µA 2.5V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 4.5 V 24 nC @ 4.5 V 69 nC @ 4.5 V 17 nC @ 4.5 V 17 nC @ 4.5 V 72 nC @ 4.5 V 26 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±20V ±20V +20V, -12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 6930 pF @ 15 V 2120 pF @ 15 V 6290 pF @ 10 V 1300 pF @ 15 V 1330 pF @ 15 V 6590 pF @ 15 V 2270 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 1.8W (Ta), 89W (Tc) 2.1W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MP DIRECTFET™ MT DIRECTFET™ MQ
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MP DirectFET™ Isometric MT DirectFET™ Isometric MQ

Related Product By Categories

FCH47N60NF
FCH47N60NF
onsemi
MOSFET N-CH 600V 45.8A TO247-3
FQB9N08TM
FQB9N08TM
Fairchild Semiconductor
MOSFET N-CH 80V 9.3A D2PAK
SIA429DJT-T1-GE3
SIA429DJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
BSP297L6327
BSP297L6327
Infineon Technologies
SMALL-SIGNAL N-CHANNEL MOSFET
NVD6824NLT4G-VF01
NVD6824NLT4G-VF01
onsemi
MOSFET N-CH 100V 8.5A/41A DPAK
FDB3652
FDB3652
onsemi
MOSFET N-CH 100V 9A/61A D2PAK
IXTA110N055T2-TRL
IXTA110N055T2-TRL
IXYS
MOSFET N-CH 55V 110A TO263
SP370251160XTMA3
SP370251160XTMA3
Infineon Technologies
SP370251160 - XENSIV - INTEGRATE
IRFZ46NL
IRFZ46NL
Infineon Technologies
MOSFET N-CH 55V 53A TO262
IPD65R660CFDBTMA1
IPD65R660CFDBTMA1
Infineon Technologies
MOSFET N-CH 650V 6A TO252-3
BUK761R4-30E,118
BUK761R4-30E,118
NXP USA Inc.
MOSFET N-CH 30V 120A D2PAK
RJK4512DPE-00#J3
RJK4512DPE-00#J3
Renesas Electronics America Inc
MOSFET N-CH 450V 14A 4LDPAK

Related Product By Brand

IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 1.9A TO252-3
IPP80N08S406AKSA1
IPP80N08S406AKSA1
Infineon Technologies
MOSFET N-CH 80V 80A TO220-3
IRLIB9343PBF
IRLIB9343PBF
Infineon Technologies
MOSFET P-CH 55V 14A TO220AB FP
IRFR825PBF
IRFR825PBF
Infineon Technologies
MOSFET N-CH 500V 6A DPAK
XMC1100-T016X0064AAXUMA1
XMC1100-T016X0064AAXUMA1
Infineon Technologies
32-BIT MCU XMC1000 ARM CORTEX-M0
XMC1301T038F0032AAXUMA1
XMC1301T038F0032AAXUMA1
Infineon Technologies
IC MCU 32BIT 32KB FLASH 38TSSOP
TLE4254GSXUMA1
TLE4254GSXUMA1
Infineon Technologies
IC REG LINEAR POS ADJ 70MA 8DSO
MB90587CPF-GS-156-BND
MB90587CPF-GS-156-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB90F395HAPMCR-C0051
MB90F395HAPMCR-C0051
Infineon Technologies
IC MCU 16BIT 512KB FLASH 120LQFP
CY9BF124MPMC-G-MNE2
CY9BF124MPMC-G-MNE2
Infineon Technologies
MM MICROCONTROLLER
CY7C1362A-166AC
CY7C1362A-166AC
Infineon Technologies
IC SRAM 9MBIT 166MHZ 100LQFP
S25FL116K0XNFA013
S25FL116K0XNFA013
Infineon Technologies
IC FLASH 16MBIT SPI/QUAD 8WSON