IRF6604TR1
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Infineon Technologies IRF6604TR1

Manufacturer No:
IRF6604TR1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6604TR1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2270 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MQ
Package / Case:DirectFET™ Isometric MQ
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Similar Products

Part Number IRF6604TR1 IRF6608TR1   IRF6609TR1   IRF6607TR1   IRF6614TR1   IRF6644TR1   IRF6603TR1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V 40 V 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 49A (Tc) 13A (Ta), 55A (Tc) 31A (Ta), 150A (Tc) 27A (Ta), 94A (Tc) 12.7A (Ta), 55A (Tc) 10.3A (Ta), 60A (Tc) 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V 4.5V, 10V 4.5V, 10V 4.5V, 7V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 12A, 7V 9mOhm @ 13A, 10V 2mOhm @ 31A, 10V 3.3mOhm @ 25A, 10V 8.3mOhm @ 12.7A, 10V 13mOhm @ 10.3A, 10V 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 3V @ 250µA 2.45V @ 250µA 2V @ 250µA 2.25V @ 250µA 4.8V @ 150µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V 24 nC @ 4.5 V 69 nC @ 4.5 V 75 nC @ 4.5 V 29 nC @ 4.5 V 47 nC @ 10 V 72 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±12V ±20V ±20V +20V, -12V
Input Capacitance (Ciss) (Max) @ Vds 2270 pF @ 15 V 2120 pF @ 15 V 6290 pF @ 10 V 6930 pF @ 15 V 2560 pF @ 20 V 2210 pF @ 25 V 6590 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.3W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 1.8W (Ta), 89W (Tc) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 3.6W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MQ DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MN DIRECTFET™ MT
Package / Case DirectFET™ Isometric MQ DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MN DirectFET™ Isometric MT

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