IRF6603
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Infineon Technologies IRF6603

Manufacturer No:
IRF6603
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6603 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 27A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 4.5 V
Vgs (Max):+20V, -12V
Input Capacitance (Ciss) (Max) @ Vds:6590 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
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Similar Products

Part Number IRF6603 IRF6607   IRF6608   IRF6623   IRF6609   IRF6601   IRF6602  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 92A (Tc) 27A (Ta), 94A (Tc) 13A (Ta), 55A (Tc) 16A (Ta), 55A (Tc) 31A (Ta), 150A (Tc) 26A (Ta), 85A (Tc) 11A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 7V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V 9mOhm @ 13A, 10V 5.7mOhm @ 15A, 10V 2mOhm @ 31A, 10V 3.8mOhm @ 26A, 10V 13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 3V @ 250µA 2.2V @ 250µA 2.45V @ 250µA 2.2V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 4.5 V 75 nC @ 4.5 V 24 nC @ 4.5 V 17 nC @ 4.5 V 69 nC @ 4.5 V 45 nC @ 4.5 V 18 nC @ 4.5 V
Vgs (Max) +20V, -12V ±12V ±12V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6590 pF @ 15 V 6930 pF @ 15 V 2120 pF @ 15 V 1360 pF @ 10 V 6290 pF @ 10 V 3440 pF @ 15 V 1420 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 1.4W (Ta), 42W (Tc) 1.8W (Ta), 89W (Tc) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ MQ
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric MQ

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