IRF6601
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Infineon Technologies IRF6601

Manufacturer No:
IRF6601
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF6601 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 26A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 42W (Tc)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MT
Package / Case:DirectFET™ Isometric MT
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Similar Products

Part Number IRF6601 IRF6602   IRF6603   IRF6607   IRF6608   IRF6609   IRF6611  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 30 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 85A (Tc) 11A (Ta), 48A (Tc) 27A (Ta), 92A (Tc) 27A (Ta), 94A (Tc) 13A (Ta), 55A (Tc) 31A (Ta), 150A (Tc) 32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 7V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 26A, 10V 13mOhm @ 11A, 10V 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V 9mOhm @ 13A, 10V 2mOhm @ 31A, 10V 2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA 2.45V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V 18 nC @ 4.5 V 72 nC @ 4.5 V 75 nC @ 4.5 V 24 nC @ 4.5 V 69 nC @ 4.5 V 56 nC @ 4.5 V
Vgs (Max) ±20V ±20V +20V, -12V ±12V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 15 V 1420 pF @ 10 V 6590 pF @ 15 V 6930 pF @ 15 V 2120 pF @ 15 V 6290 pF @ 10 V 4860 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc) 2.3W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc) 2.1W (Ta), 42W (Tc) 1.8W (Ta), 89W (Tc) 3.9W (Ta), 89W (Tc)
Operating Temperature - - -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MQ DIRECTFET™ MT DIRECTFET™ MT DIRECTFET™ ST DIRECTFET™ MT DIRECTFET™ MX
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MQ DirectFET™ Isometric MT DirectFET™ Isometric MT DirectFET™ Isometric ST DirectFET™ Isometric MT DirectFET™ Isometric MX

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