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| Part Number | IRF640NSTRLPBF | IRF640STRLPBF | IRF640NSTRRPBF | IRF644NSTRLPBF | IRF630NSTRLPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Product Status | Active | Active | Not For New Designs | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 250 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | 18A (Tc) | 18A (Tc) | 14A (Tc) | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | 180mOhm @ 11A, 10V | 150mOhm @ 11A, 10V | 240mOhm @ 8.4A, 10V | 300mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | 70 nC @ 10 V | 67 nC @ 10 V | 54 nC @ 10 V | 35 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V | 1300 pF @ 25 V | 1160 pF @ 25 V | 1060 pF @ 25 V | 575 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 150W (Tc) | 3.1W (Ta), 130W (Tc) | 150W (Tc) | 150W (Tc) | 82W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK | D²PAK (TO-263) | D2PAK | D²PAK (TO-263) | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
