IRF640NPBF
  • Share:

Infineon Technologies IRF640NPBF

Manufacturer No:
IRF640NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF640NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.29
219

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF640NPBF IRF640PBF   IRF640SPBF   IRF644NPBF   IRF640NSPBF   IRF630NPBF   IRF640LPBF   IRF640NLPBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Obsolete Discontinued at Digi-Key Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 180mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-220AB TO-262-3 TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

HUFA76629D3S
HUFA76629D3S
Fairchild Semiconductor
MOSFET N-CH 100V 20A TO252AA
STL36N60M6
STL36N60M6
STMicroelectronics
MOSFET N-CH 600V 25A PWRFLAT HV
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
IPB032N10N5ATMA1
IPB032N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 166A TO263-7
HUFA76409D3ST
HUFA76409D3ST
Fairchild Semiconductor
N-CHANNEL LOGIC LEVEL ULTRAFET
NTTFS4928NTAG
NTTFS4928NTAG
onsemi
MOSFET N-CH 30V 7.3A/37A 8WDFN
BUK962R8-60E,118
BUK962R8-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
IRFZ46NSTRL
IRFZ46NSTRL
Infineon Technologies
MOSFET N-CH 55V 53A D2PAK
64-9146
64-9146
Infineon Technologies
MOSFET N-CH 20V 32A DIRECTFET
IPI12CNE8N G
IPI12CNE8N G
Infineon Technologies
MOSFET N-CH 85V 67A TO262-3
APT12057JLL
APT12057JLL
Microsemi Corporation
MOSFET N-CH 1200V 19A SOT227
BUK6Y25-40PX
BUK6Y25-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 38A LFPAK56

Related Product By Brand

TT320N16SOFHPSA1
TT320N16SOFHPSA1
Infineon Technologies
THYRISTOR MODULE 1600V 320A
IPP17N25S3100AKSA1
IPP17N25S3100AKSA1
Infineon Technologies
MOSFET N-CH 250V 17A TO220-3
TLE9255WLCXUMA1
TLE9255WLCXUMA1
Infineon Technologies
TRANSCEIVER
IRS2336STRPBF
IRS2336STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
TLE6281GXUMA1
TLE6281GXUMA1
Infineon Technologies
IC MOTOR DRIVER 7.5V-60V 20DSO
BTS5234LNT
BTS5234LNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
S6E2C18J0AGV2000A
S6E2C18J0AGV2000A
Infineon Technologies
IC MCU 32BIT 1MB FLASH 176LQFP
MB91F591BSPMC-GSK5E2
MB91F591BSPMC-GSK5E2
Infineon Technologies
IC MCU 32BIT 576KB FLASH 208LQFP
MB90922NCSPMC-GS-130E1
MB90922NCSPMC-GS-130E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
MB91213APMC-GS-176K5E1
MB91213APMC-GS-176K5E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP
S25FL064LABNFI013
S25FL064LABNFI013
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8WSON
S29GL256P90TFIR23
S29GL256P90TFIR23
Infineon Technologies
IC FLASH 256MBIT PARALLEL 56TSOP