IRF640NLPBF
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Infineon Technologies IRF640NLPBF

Manufacturer No:
IRF640NLPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF640NLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 18A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF640NLPBF IRF640NPBF   IRF644NLPBF   IRF640NSPBF   IRF630NLPBF   IRF640LPBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Not For New Designs Active Obsolete Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 250 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 150mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 67 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1160 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-262 TO-220AB I2PAK D2PAK TO-262 TO-262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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