IRF630NPBF
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Infineon Technologies IRF630NPBF

Manufacturer No:
IRF630NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF630NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 9.3A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:575 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):82W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF630NPBF IRF640NPBF   IRF630PBF   IRF630SPBF   IRF634NPBF   IRF630NSPBF   IRF630NLPBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V 250 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc) 18A (Tc) 9A (Tc) 9A (Tc) 8A (Tc) 9.3A (Tc) 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V 150mOhm @ 11A, 10V 400mOhm @ 5.4A, 10V 400mOhm @ 5.4A, 10V 435mOhm @ 4.8A, 10V 300mOhm @ 5.4A, 10V 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 67 nC @ 10 V 43 nC @ 10 V 43 nC @ 10 V 34 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 25 V 1160 pF @ 25 V 800 pF @ 25 V 800 pF @ 25 V 620 pF @ 25 V 575 pF @ 25 V 575 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 82W (Tc) 150W (Tc) 74W (Tc) 3W (Ta), 74W (Tc) 3.8W (Ta), 88W (Tc) 82W (Tc) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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