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| Part Number | IRF630NLPBF | IRF630NPBF | IRF640NLPBF | IRF634NLPBF | IRF630NSPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Product Status | Obsolete | Active | Not For New Designs | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 250 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) | 9.3A (Tc) | 18A (Tc) | 8A (Tc) | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V | 300mOhm @ 5.4A, 10V | 150mOhm @ 11A, 10V | 435mOhm @ 4.8A, 10V | 300mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 35 nC @ 10 V | 67 nC @ 10 V | 34 nC @ 10 V | 35 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V | 575 pF @ 25 V | 1160 pF @ 25 V | 620 pF @ 25 V | 575 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 82W (Tc) | 82W (Tc) | 150W (Tc) | 3.8W (Ta), 88W (Tc) | 82W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Surface Mount |
| Supplier Device Package | TO-262 | TO-220AB | TO-262 | I2PAK | D2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
