IRF6215LPBF
  • Share:

Infineon Technologies IRF6215LPBF

Manufacturer No:
IRF6215LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF6215LPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 150V 13A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
405

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6215LPBF IRF6215PBF   IRF6215SPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 110W (Tc) 110W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-262 TO-220AB D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

DMN63D8L-7
DMN63D8L-7
Diodes Incorporated
MOSFET N-CH 30V 350MA SOT23
IXTH48P20P
IXTH48P20P
IXYS
MOSFET P-CH 200V 48A TO247
FDD3570
FDD3570
Fairchild Semiconductor
MOSFET N-CH 80V 10A TO252
UF4C120053K4S
UF4C120053K4S
UnitedSiC
1200V/53MOHM, SIC, FAST CASCODE,
TP2635N3-G
TP2635N3-G
Microchip Technology
MOSFET P-CH 350V 180MA TO92-3
RFD14N05SM
RFD14N05SM
Fairchild Semiconductor
MOSFET N-CH 50V 14A TO252AA
DMN15H310SK3-13
DMN15H310SK3-13
Diodes Incorporated
MOSFET N-CH 150V 8.3A TO252
FCPF380N65FL1-F154
FCPF380N65FL1-F154
onsemi
MOSFET N-CH 650V 10.2A TO220F-3
APT10050JVFR
APT10050JVFR
Microchip Technology
MOSFET N-CH 1000V 19A ISOTOP
NTB18N06LG
NTB18N06LG
onsemi
MOSFET N-CH 60V 15A D2PAK
STD90N02L-1
STD90N02L-1
STMicroelectronics
MOSFET N-CH 25V 60A IPAK
TK20P04M1,RQ(S
TK20P04M1,RQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 20A DPAK

Related Product By Brand

AUIRF7304Q
AUIRF7304Q
Infineon Technologies
MOSFET 2P-CH 20V 4A 8SOIC
IPB010N06NATMA1
IPB010N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 45A/180A TO263-7
AUIRS2092S
AUIRS2092S
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
IR2117
IR2117
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8DIP
CY9BF365LQN-G-AVE2
CY9BF365LQN-G-AVE2
Infineon Technologies
IC MCU 32BIT 416KB FLASH 64QFN
CY8C4548AXI-S475
CY8C4548AXI-S475
Infineon Technologies
IC MCU 32BIT 256KB FLASH 64TQFP
MB90427GCPFV-GS-166
MB90427GCPFV-GS-166
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
S6E2D55J0AGV2000A
S6E2D55J0AGV2000A
Infineon Technologies
IC MCU 32BIT 384KB FLASH 176LQFP
MB90387SPMT-G-368SN-YE1
MB90387SPMT-G-368SN-YE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
CY15B064Q-SXET
CY15B064Q-SXET
Infineon Technologies
IC FRAM 64KBIT SPI 16MHZ 8SOIC
CY7C1041CV33-8ZSXI
CY7C1041CV33-8ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
S29PL127J60TFA080
S29PL127J60TFA080
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP