IRF6215LPBF
  • Share:

Infineon Technologies IRF6215LPBF

Manufacturer No:
IRF6215LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF6215LPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 150V 13A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
405

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF6215LPBF IRF6215PBF   IRF6215SPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V 290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 860 pF @ 25 V 860 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 110W (Tc) 110W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-262 TO-220AB D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTE2393
NTE2393
NTE Electronics, Inc
MOSFET N-CHANNEL 500V 10A TO3P
SIA477EDJT-T1-GE3
SIA477EDJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 12A PPAK SC70-6
PSMN1R5-30YL,115
PSMN1R5-30YL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A 8TDSON-34
SSM3K16CTC,L3F
SSM3K16CTC,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 200MA CST3C
SKI04033
SKI04033
Sanken
MOSFET N-CH 40V 80A TO263
IXFT50N60X
IXFT50N60X
IXYS
MOSFET N-CH 600V 50A TO268
G70N04T
G70N04T
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
FQI9N08LTU
FQI9N08LTU
onsemi
MOSFET N-CH 80V 9.3A I2PAK
FQB7N20TM
FQB7N20TM
onsemi
MOSFET N-CH 200V 6.6A D2PAK
IXUN280N10
IXUN280N10
IXYS
MOSFET N-CH 100V 280A SOT-227B
IPB160N08S403ATMA1
IPB160N08S403ATMA1
Infineon Technologies
MOSFET N-CH 80V 160A TO263-7

Related Product By Brand

IRDC3897
IRDC3897
Infineon Technologies
BOARD EVAL SUPIRBUCK IR3897
IPB60R105CFD7ATMA1
IPB60R105CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 21A TO263-3-2
IPD90N04S3-04
IPD90N04S3-04
Infineon Technologies
OPTLMOS N-CHANNEL POWER MOSFET
6ED003L02F2XUMA1
6ED003L02F2XUMA1
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28TSSOP
BTF60702ERVXUMA1
BTF60702ERVXUMA1
Infineon Technologies
IC SWTCH HISIDE SMRT
IHW20N65R5
IHW20N65R5
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
PVI1050NS-TPBF
PVI1050NS-TPBF
Infineon Technologies
OPTOISO 2.5KV 2CH PHVOLT 8-SMT
TLE49215UHALA1
TLE49215UHALA1
Infineon Technologies
MAG SWITCH SPEC PURP SSO-4-1
CYIFS741BSXBT
CYIFS741BSXBT
Infineon Technologies
IC CLOCK SSCG EMI 8-SOIC
CY25100SXC-069
CY25100SXC-069
Infineon Technologies
IC CLOCK GENERATOR
MB91F526FSBPMC-GTE1
MB91F526FSBPMC-GTE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 100LQFP
CY2292SL-808
CY2292SL-808
Infineon Technologies
IC 3PLL EPROM CLOCK GEN 16SOIC