IRF6201PBF
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Infineon Technologies IRF6201PBF

Manufacturer No:
IRF6201PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF6201PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 27A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:8555 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF6201PBF IRF620SPBF   IRF620PBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix
Product Status Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta) 5.2A (Tc) 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 10V 10V
Rds On (Max) @ Id, Vgs 2.45mOhm @ 27A, 4.5V 800mOhm @ 3.1A, 10V 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.1V @ 100µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 4.5 V 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8555 pF @ 16 V 260 pF @ 25 V 260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 3W (Ta), 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package 8-SO D²PAK (TO-263) TO-220AB
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

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