Infineon Technologies-IRF60DM206 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	200 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6530 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	96W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DirectFET™ Isometric ME
Package / Case:	DirectFET™ Isometric ME

Infineon Technologies IRF60DM206