IRF60B217
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Infineon Technologies IRF60B217

Manufacturer No:
IRF60B217
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF60B217 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 60A TO220AB
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF60B217 IRF60R217  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 36A, 10V 9.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.7V @ 50µA 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 25 V 2170 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB D-PAK (TO-252AA)
Package / Case TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63

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