IRF60B217
  • Share:

Infineon Technologies IRF60B217

Manufacturer No:
IRF60B217
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF60B217 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 60A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.89
368

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF60B217 IRF60R217  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 36A, 10V 9.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.7V @ 50µA 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 25 V 2170 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB D-PAK (TO-252AA)
Package / Case TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF1407STRLPBF
IRF1407STRLPBF
Infineon Technologies
MOSFET N-CH 75V 100A D2PAK
IPU06N03LZG
IPU06N03LZG
Infineon Technologies
N-CHANNEL POWER MOSFET
FQP32N12V2
FQP32N12V2
Fairchild Semiconductor
MOSFET N-CH 120V 32A TO220-3
2SK3055-AZ
2SK3055-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SI2399DS-T1-GE3
SI2399DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 6A SOT23-3
HUF75329D3ST
HUF75329D3ST
onsemi
MOSFET N-CH 55V 20A TO252AA
TK39J60W,S1VQ
TK39J60W,S1VQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 38.8A TO3P
BUK7Y28-75B,115
BUK7Y28-75B,115
Nexperia USA Inc.
MOSFET N-CH 75V 35.5A LFPAK56
FDMS007N08LC
FDMS007N08LC
onsemi
MOSFET N-CH 80V 14A/84A 8PQFN
NTMFS4937NT1G
NTMFS4937NT1G
onsemi
MOSFET N-CH 30V 10.2A/70A 5DFN
TK14A45D(STA4,Q,M)
TK14A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 14A TO220SIS
NVMFS6B14NLWFT3G
NVMFS6B14NLWFT3G
onsemi
MOSFET N-CH 100V 11A/55A 5DFN

Related Product By Brand

BAT60AE6327HTSA1
BAT60AE6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 10V 3A SOD323-2
BSC009NE2LS5ATMA1
BSC009NE2LS5ATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/100A TDSON
IRF6616TRPBF
IRF6616TRPBF
Infineon Technologies
MOSFET N-CH 40V 19A DIRECTFET
IPD50R399CPATMA1
IPD50R399CPATMA1
Infineon Technologies
LOW POWER_LEGACY
IRL40B209
IRL40B209
Infineon Technologies
MOSFET N-CH 40V 195A TO220AB
IR11688STRPBF
IR11688STRPBF
Infineon Technologies
DUAL SYNCHRONOUS RECTIFICATION C
TLS850D0TEV50ATMA1
TLS850D0TEV50ATMA1
Infineon Technologies
IC REG LINEAR 5V 500MA TO252-5
MB90F022CPF-GS-9111
MB90F022CPF-GS-9111
Infineon Technologies
IC MCU MICOM FLASH 100QFP
MB90F345CAPF-G-SNE1
MB90F345CAPF-G-SNE1
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100QFP
MB96F613RBPMC-GS-127E2
MB96F613RBPMC-GS-127E2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
CY7C109D-10ZXI
CY7C109D-10ZXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32TSOP I
S29GL128P90TFIR10
S29GL128P90TFIR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP