IRF5852TR
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Infineon Technologies IRF5852TR

Manufacturer No:
IRF5852TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF5852TR Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 2.7A 6-TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.7A
Rds On (Max) @ Id, Vgs:90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 15V
Power - Max:960mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
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Similar Products

Part Number IRF5852TR IRF5850TR   IRF5851TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 P-Channel (Dual) N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.2A 2.7A, 2.2A
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V 135mOhm @ 2.2A, 4.5V 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.2V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V 5.4nC @ 4.5V 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V 320pF @ 15V 400pF @ 15V
Power - Max 960mW 960mW 960mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP

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