IRF5805TRPBF
  • Share:

Infineon Technologies IRF5805TRPBF

Manufacturer No:
IRF5805TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF5805TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 3.8A MICRO6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:98mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:511 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

-
538

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5805TRPBF IRF5806TRPBF   IRF5800TRPBF   IRF5801TRPBF   IRF5802TRPBF   IRF5803TRPBF   IRF5804TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Active Active Active Obsolete
FET Type P-Channel P-Channel P-Channel N-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 200 V 150 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 4A (Ta) 4A (Ta) 600mA (Ta) 900mA (Ta) 3.4A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 3.8A, 10V 86mOhm @ 4A, 4.5V 85mOhm @ 4A, 10V 2.2Ohm @ 360mA, 10V 1.2Ohm @ 540mA, 10V 112mOhm @ 3.4A, 10V 198mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1.2V @ 250µA 1V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 11.4 nC @ 4.5 V 17 nC @ 10 V 3.9 nC @ 10 V 6.8 nC @ 10 V 37 nC @ 10 V 8.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 511 pF @ 25 V 594 pF @ 15 V 535 pF @ 25 V 88 pF @ 25 V 88 pF @ 25 V 1110 pF @ 25 V 680 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

FCP22N60N
FCP22N60N
onsemi
MOSFET N-CH 600V 22A TO220-3
NTE2379
NTE2379
NTE Electronics, Inc
MOSFET N-CHANNEL 600V 6.2A TO220
SI2337DS-T1-GE3
SI2337DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 80V 2.2A SOT23-3
SIS184DN-T1-GE3
SIS184DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 17.4A/65.3A PPAK
NCV8440ASTT3G
NCV8440ASTT3G
onsemi
MOSFET N-CH 59V 2.6A SOT223
TK3R1E04PL,S1X
TK3R1E04PL,S1X
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 100A TO220
SQP90142E_GE3
SQP90142E_GE3
Vishay Siliconix
MOSFET N-CH 200V 78.5A TO220AB
IRF7413TRPBF
IRF7413TRPBF
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
STP120NH03L
STP120NH03L
STMicroelectronics
MOSFET N-CH 30V 60A TO220AB
STB85NS04Z
STB85NS04Z
STMicroelectronics
MOSFET N-CH 33V 80A D2PAK
TK20A25D,S5Q(M
TK20A25D,S5Q(M
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 20A TO220SIS
TSM2311CX RFG
TSM2311CX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4A SOT23

Related Product By Brand

BAT54-02LRHE6327
BAT54-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFN39E6327HTSA1
BFN39E6327HTSA1
Infineon Technologies
TRANS PNP 300V 0.2A SOT223-4
IPP057N06N3GXKSA1
IPP057N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
IRF3710STRRPBF
IRF3710STRRPBF
Infineon Technologies
MOSFET N-CH 100V 57A D2PAK
FP75R17N3E4B11BPSA1
FP75R17N3E4B11BPSA1
Infineon Technologies
IGBT MOD 1700V 150A 20MW
TLE94108ELXUMA1
TLE94108ELXUMA1
Infineon Technologies
IC DRIVER HALF-BRIDGE 24SSOP
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
KTY21-5
KTY21-5
Infineon Technologies
THERMISTOR PTC 985 OHM 3% TO92
CY8C4126AZI-M475
CY8C4126AZI-M475
Infineon Technologies
IC MCU 32BIT 64KB FLASH 64TQFP
CY7C1354CV25-166AXC
CY7C1354CV25-166AXC
Infineon Technologies
NO WARRANTY
CY14B101LA-ZS20XI
CY14B101LA-ZS20XI
Infineon Technologies
IC NVSRAM 1MBIT PAR 44TSOP II
S29JL032J60BHI313
S29JL032J60BHI313
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA