IRF5805
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Infineon Technologies IRF5805

Manufacturer No:
IRF5805
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF5805 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 3.8A MICRO6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:98mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:511 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number IRF5805 IRF5806   IRF5800   IRF5802   IRF5803   IRF5804  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 150 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 4A (Ta) 4A (Ta) 900mA (Ta) 3.4A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 3.8A, 10V 86mOhm @ 4A, 4.5V 85mOhm @ 4A, 10V 1.2Ohm @ 540mA, 10V 112mOhm @ 3.4A, 10V 198mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1.2V @ 250µA 1V @ 250µA 5.5V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 11.4 nC @ 4.5 V 17 nC @ 10 V 6.8 nC @ 10 V 37 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 511 pF @ 25 V 594 pF @ 15 V 535 pF @ 25 V 88 pF @ 25 V 1110 pF @ 25 V 680 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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