IRF5803TRPBF
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Infineon Technologies IRF5803TRPBF

Manufacturer No:
IRF5803TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF5803TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 3.4A MICRO6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number IRF5803TRPBF IRF5804TRPBF   IRF5805TRPBF   IRF5806TRPBF   IRF5800TRPBF   IRF5801TRPBF   IRF5802TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Obsolete Obsolete Active Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 30 V 20 V 30 V 200 V 150 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) 2.5A (Ta) 3.8A (Ta) 4A (Ta) 4A (Ta) 600mA (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V 198mOhm @ 2.5A, 10V 98mOhm @ 3.8A, 10V 86mOhm @ 4A, 4.5V 85mOhm @ 4A, 10V 2.2Ohm @ 360mA, 10V 1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1V @ 250µA 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 8.5 nC @ 10 V 17 nC @ 10 V 11.4 nC @ 4.5 V 17 nC @ 10 V 3.9 nC @ 10 V 6.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 680 pF @ 25 V 511 pF @ 25 V 594 pF @ 15 V 535 pF @ 25 V 88 pF @ 25 V 88 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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