IRF5802TRPBF
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Infineon Technologies IRF5802TRPBF

Manufacturer No:
IRF5802TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF5802TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 900MA MICRO6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:88 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number IRF5802TRPBF IRF5803TRPBF   IRF5804TRPBF   IRF5805TRPBF   IRF5806TRPBF   IRF5800TRPBF   IRF5801TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 40 V 40 V 30 V 20 V 30 V 200 V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 3.4A (Ta) 2.5A (Ta) 3.8A (Ta) 4A (Ta) 4A (Ta) 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 540mA, 10V 112mOhm @ 3.4A, 10V 198mOhm @ 2.5A, 10V 98mOhm @ 3.8A, 10V 86mOhm @ 4A, 4.5V 85mOhm @ 4A, 10V 2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V 37 nC @ 10 V 8.5 nC @ 10 V 17 nC @ 10 V 11.4 nC @ 4.5 V 17 nC @ 10 V 3.9 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V ±20V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V 1110 pF @ 25 V 680 pF @ 25 V 511 pF @ 25 V 594 pF @ 15 V 535 pF @ 25 V 88 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6) Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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