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| Part Number | IRF5802TR | IRF5803TR | IRF5804TR | IRF5805TR | IRF5800TR |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V | 40 V | 40 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | 3.4A (Ta) | 2.5A (Ta) | 3.8A (Ta) | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V | 112mOhm @ 3.4A, 10V | 198mOhm @ 2.5A, 10V | 98mOhm @ 3.8A, 10V | 85mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | 3V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | 37 nC @ 10 V | 21 nC @ 10 V | 17 nC @ 10 V | 17 nC @ 10 V |
| Vgs (Max) | - | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V | 1110 pF @ 25 V | 680 pF @ 25 V | 511 pF @ 25 V | 535 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | - | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) | Micro6™(TSOP-6) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
