IRF540NPBF
  • Share:

Infineon Technologies IRF540NPBF

Manufacturer No:
IRF540NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF540NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 33A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.34
720

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF540NPBF IRF540SPBF   IRF540PBF   IRF540ZPBF   IRF540NSPBF   IRF520NPBF   IRF530NPBF   IRF540NLPBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Active Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 28A (Tc) 28A (Tc) 36A (Tc) 33A (Tc) 9.7A (Tc) 17A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V 77mOhm @ 17A, 10V 77mOhm @ 17A, 10V 26.5mOhm @ 22A, 10V 44mOhm @ 16A, 10V 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 72 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 71 nC @ 10 V 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 25 V 1700 pF @ 25 V 1700 pF @ 25 V 1770 pF @ 25 V 1960 pF @ 25 V 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 92W (Tc) 130W (Tc) 48W (Tc) 70W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D²PAK (TO-263) TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

2SK3288ENTL-E
2SK3288ENTL-E
Renesas Electronics America Inc
N-CHANNEL MOSFET
STFI15N60M2-EP
STFI15N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 11A I2PAKFP
IRFZ44RPBF-BE3
IRFZ44RPBF-BE3
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 4.3A SOT23-3
TK40A06N1,S4X
TK40A06N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 40A TO220SIS
STD8NF25
STD8NF25
STMicroelectronics
MOSFET N-CH 250V 8A DPAK
AOD2916
AOD2916
Alpha & Omega Semiconductor Inc.
MOSFET N CH 100V 5.5A TO252
AON7510
AON7510
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 45A/75A 8DFN
IRL1004S
IRL1004S
Infineon Technologies
MOSFET N-CH 40V 130A D2PAK
IRF6618TR1
IRF6618TR1
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
NVMFS5C670NLT1G
NVMFS5C670NLT1G
onsemi
MOSFET N-CH 60V 17A/71A 5DFN
R6511END3TL1
R6511END3TL1
Rohm Semiconductor
650V 11A TO-252, LOW-NOISE POWER

Related Product By Brand

D2650N24TVFXPSA1
D2650N24TVFXPSA1
Infineon Technologies
DIODE GEN PURP 2.4KV 2650A
IPW50R299CP
IPW50R299CP
Infineon Technologies
N-CHANNEL POWER MOSFET
BTS282ZE3180A
BTS282ZE3180A
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB65R190C7ATMA1
IPB65R190C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 13A D2PAK
ICE5GR4780AGXUMA1
ICE5GR4780AGXUMA1
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 12DSO
TLE4276SVNKSA1
TLE4276SVNKSA1
Infineon Technologies
IC REG LIN POS ADJ 400MA TO220-5
MB90457SPMT-GS-202
MB90457SPMT-GS-202
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
MB90349CASPFV-G-167
MB90349CASPFV-G-167
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
CY90F347CASPFR-GSE1
CY90F347CASPFR-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
MB90553BPMC-G-367E1
MB90553BPMC-G-367E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
S25FL512SAGMFBG10
S25FL512SAGMFBG10
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY14E256Q5A-SXQ
CY14E256Q5A-SXQ
Infineon Technologies
IC NVSRAM 256KBIT SPI 8SOIC