IRF530NPBF
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Infineon Technologies IRF530NPBF

Manufacturer No:
IRF530NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF530NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 17A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF530NPBF IRF540NPBF   IRF530PBF   IRF530SPBF   IRF530NSPBF   IRF520NPBF   IRF5305PBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 33A (Tc) 14A (Tc) 14A (Tc) 17A (Tc) 9.7A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V 160mOhm @ 8.4A, 10V 160mOhm @ 8.4A, 10V 90mOhm @ 9A, 10V 200mOhm @ 5.7A, 10V 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 71 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V 37 nC @ 10 V 25 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V 1960 pF @ 25 V 670 pF @ 25 V 670 pF @ 25 V 920 pF @ 25 V 330 pF @ 25 V 1200 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 70W (Tc) 130W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 70W (Tc) 48W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3

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