IRF5210STRR
  • Share:

Infineon Technologies IRF5210STRR

Manufacturer No:
IRF5210STRR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF5210STRR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 40A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
360

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF5210STRR IRF510STRR   IRF520STRR  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix
Product Status Obsolete Obsolete Active
FET Type P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 5.6A (Tc) 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V 540mOhm @ 3.4A, 10V 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 8.3 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 180 pF @ 25 V 360 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.7W (Ta), 43W (Tc) 3.7W (Ta), 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQAF13N80
FQAF13N80
onsemi
MOSFET N-CH 800V 8A TO3PF
PJD9N10A_L2_00001
PJD9N10A_L2_00001
Panjit International Inc.
100V N-CHANNEL MOSFET
IXTA50N20P
IXTA50N20P
IXYS
MOSFET N-CH 200V 50A TO263
FDD5N50TM
FDD5N50TM
Fairchild Semiconductor
4A, 500V, 1.4OHM, N-CHANNEL POWE
PSMN1R1-30PL,127
PSMN1R1-30PL,127
NXP Semiconductors
NEXPERIA PSMN1R1-30PL - 120A, 30
IRLR3105TRPBF
IRLR3105TRPBF
Infineon Technologies
MOSFET N-CH 55V 25A DPAK
RM80N60DF
RM80N60DF
Rectron USA
MOSFET N-CHANNEL 60V 80A 8DFN
ZXM62N03E6TA
ZXM62N03E6TA
Diodes Incorporated
MOSFET N-CH 30V 3.2A SOT-23-6
IRF510STRL
IRF510STRL
Vishay Siliconix
MOSFET N-CH 100V 5.6A D2PAK
IRFR9020TRR
IRFR9020TRR
Vishay Siliconix
MOSFET P-CH 50V 9.9A DPAK
MMFT2406T1
MMFT2406T1
onsemi
MOSFET N-CH 240V 700MA SOT223
SUD50P04-13L-GE3
SUD50P04-13L-GE3
Vishay Siliconix
MOSFET P-CH 40V 60A TO252

Related Product By Brand

SMBD914E6327HTSA1
SMBD914E6327HTSA1
Infineon Technologies
DIODE GP 100V 250MA SOT23-3
BCR08PNE6327BTSA1
BCR08PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
PTFB191501FV1R250XTMA1
PTFB191501FV1R250XTMA1
Infineon Technologies
FET RF LDMOS 150W H37248-2
SPD15P10PGBTMA1
SPD15P10PGBTMA1
Infineon Technologies
MOSFET P-CH 100V 15A TO252-3
IPA65R400CEXKSA1
IPA65R400CEXKSA1
Infineon Technologies
MOSFET N-CH 650V TO220
IRFR9N20DTRPBF
IRFR9N20DTRPBF
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
PVDZ172N
PVDZ172N
Infineon Technologies
SSR RELAY SPST-NO 1.5A 0-60V
CY2X014LXI153T
CY2X014LXI153T
Infineon Technologies
IC OSC XTAL 153.6MHZ 6CLCC
MB90428GAVPF-GS-318
MB90428GAVPF-GS-318
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90F020CPMT-GS-9166
MB90F020CPMT-GS-9166
Infineon Technologies
IC MCU 120LQFP
MB90F367TSPMT-GSE1
MB90F367TSPMT-GSE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
FM25L04B-GA4
FM25L04B-GA4
Infineon Technologies
IC FRAM 4KBIT SPI 8SOIC