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| Part Number | IRF5210PBF | IRF5210SPBF | IRF510PBF | IRF520PBF | IRF5210LPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Infineon Technologies |
| Product Status | Active | Discontinued at Digi-Key | Active | Active | Last Time Buy |
| FET Type | P-Channel | P-Channel | N-Channel | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | 38A (Tc) | 5.6A (Tc) | 9.2A (Tc) | 38A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 24A, 10V | 60mOhm @ 38A, 10V | 540mOhm @ 3.4A, 10V | 270mOhm @ 5.5A, 10V | 60mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 230 nC @ 10 V | 8.3 nC @ 10 V | 16 nC @ 10 V | 230 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V | 2780 pF @ 25 V | 180 pF @ 25 V | 360 pF @ 25 V | 2780 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 200W (Tc) | 3.1W (Ta), 170W (Tc) | 43W (Tc) | 60W (Tc) | 3.1W (Ta), 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | D2PAK | TO-220AB | TO-220AB | TO-262 |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
