IRF5210LPBF
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Infineon Technologies IRF5210LPBF

Manufacturer No:
IRF5210LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF5210LPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 38A TO262
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF5210LPBF IRF5210PBF   IRF5210SPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Active Discontinued at Digi-Key
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 40A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V 60mOhm @ 24A, 10V 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 180 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V 2700 pF @ 25 V 2780 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) 200W (Tc) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-262 TO-220AB D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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