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| Part Number | IRF5210L | IRF510L |
|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix |
| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | 5.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 24A, 10V | 540mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V | 180 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-262 | TO-262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
