IRF520NPBF
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Infineon Technologies IRF520NPBF

Manufacturer No:
IRF520NPBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF520NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 9.7A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF520NPBF IRF530NPBF   IRF540NPBF   IRF520PBF   IRF520SPBF   IRF520NSPBF   IRF520NLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc) 17A (Tc) 33A (Tc) 9.2A (Tc) 9.2A (Tc) 9.7A (Tc) 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 5.7A, 10V 90mOhm @ 9A, 10V 44mOhm @ 16A, 10V 270mOhm @ 5.5A, 10V 270mOhm @ 5.5A, 10V 200mOhm @ 5.7A, 10V 200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 37 nC @ 10 V 71 nC @ 10 V 16 nC @ 10 V 16 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 920 pF @ 25 V 1960 pF @ 25 V 360 pF @ 25 V 360 pF @ 25 V 330 pF @ 25 V 330 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 48W (Tc) 70W (Tc) 130W (Tc) 60W (Tc) 3.7W (Ta), 60W (Tc) 3.8W (Ta), 48W (Tc) 3.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB D2PAK D2PAK TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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