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| Part Number | IRF520N | IRF520NS | IRF520NL | IRF520S | IRF520 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Harris Corporation |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) | 9.7A (Tc) | 9.7A (Tc) | 9.2A (Tc) | 9.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V | 200mOhm @ 5.7A, 10V | 200mOhm @ 5.7A, 10V | 270mOhm @ 5.5A, 10V | 270mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 25 nC @ 10 V | 25 nC @ 10 V | 16 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V | 330 pF @ 25 V | 330 pF @ 25 V | 360 pF @ 25 V | 350 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 48W (Tc) | 3.8W (Ta), 48W (Tc) | 3.8W (Ta), 48W (Tc) | 3.7W (Ta), 60W (Tc) | 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount | Through Hole |
| Supplier Device Package | TO-220AB | D2PAK | TO-262 | D²PAK (TO-263) | TO-220AB |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
