IRF4104
  • Share:

Infineon Technologies IRF4104

Manufacturer No:
IRF4104
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF4104 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 75A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
81

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF4104 IRF4104L   IRF4104S  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 75A, 10V 5.5mOhm @ 75A, 10V 5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 3000 pF @ 25 V 3000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 140W (Tc) 140W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-262 D2PAK
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSC0902NSATMA1
BSC0902NSATMA1
Infineon Technologies
MOSFET N-CH 30V 24A/100A TDSON
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1
Infineon Technologies
MOSFET N-CH 75V 100A TDSON
IPP139N08N3GXKSA1
IPP139N08N3GXKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
SI7812DN-T1-E3
SI7812DN-T1-E3
Vishay Siliconix
MOSFET N-CH 75V 16A PPAK1212-8
PSMN1R0-40SSHJ
PSMN1R0-40SSHJ
Nexperia USA Inc.
MOSFET N-CH 40V 325A LFPAK88
IXTH50P10
IXTH50P10
IXYS
MOSFET P-CH 100V 50A TO247
DMP3026SFDF-7
DMP3026SFDF-7
Diodes Incorporated
MOSFET P-CH 30V 10.3A 6UDFN
IXTA230N04T4
IXTA230N04T4
IXYS
MOSFET N-CH 40V 230A TO263AA
MMIX1F44N100Q3
MMIX1F44N100Q3
IXYS
MOSFET N-CH 1000V 30A 24SMPD
SI4876DY-T1-E3
SI4876DY-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 14A 8SO
IRFP260
IRFP260
IXYS
MOSFET N-CH 200V 46A TO247AD
IRF7478TRPBF-1
IRF7478TRPBF-1
Infineon Technologies
MOSFET N-CH 60V 7A 8SO

Related Product By Brand

BSP321PL6327
BSP321PL6327
Infineon Technologies
P-CHANNEL MOSFET
IRF3711L
IRF3711L
Infineon Technologies
MOSFET N-CH 20V 110A TO262
SPI15N65C3XKSA1
SPI15N65C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 15A TO262-3
IRF6729MTRPBF
IRF6729MTRPBF
Infineon Technologies
MOSFET N-CH 30V 31A DIRECTFET
SAE800
SAE800
Infineon Technologies
IC AUDIO TONE PROCESSOR 8DIP
IR2101SPBF
IR2101SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
CY22800FXC-032A
CY22800FXC-032A
Infineon Technologies
IC PROG CLOCK GEN 8-SOIC
CY9BF164LQN-G-AVE2
CY9BF164LQN-G-AVE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64QFN
MB90922NASPMC-GS-108E1
MB90922NASPMC-GS-108E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
S29AL016J70TFN013
S29AL016J70TFN013
Infineon Technologies
IC FLASH 16MBIT PARALLEL 48TSOP
CY7C1041G30-10ZSXIT
CY7C1041G30-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
S25FL129P0XBHV213
S25FL129P0XBHV213
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA