IRF40B207
  • Share:

Infineon Technologies IRF40B207

Manufacturer No:
IRF40B207
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF40B207 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 95A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 57A, 10V
Vgs(th) (Max) @ Id:3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.48
496

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF40B207 IRF40R207  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc) 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 57A, 10V 5.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 3.9V @ 50µA 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2110 pF @ 25 V 2110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB PG-TO252-3
Package / Case TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

AOT11S60L
AOT11S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 11A TO220
IMZ120R060M1HXKSA1
IMZ120R060M1HXKSA1
Infineon Technologies
SICFET N-CH 1.2KV 36A TO247-4
IPD50N06S3L-06
IPD50N06S3L-06
Infineon Technologies
N-CHANNEL POWER MOSFET
SIRA20BDP-T1-GE3
SIRA20BDP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 82A/335A PPAK
FDFM2P110
FDFM2P110
Fairchild Semiconductor
MOSFET P-CH 20V 3.5A MICROFET
HUF75639S3STNL
HUF75639S3STNL
Fairchild Semiconductor
56A, 100V, 0.025OHM, N-CHANNEL P
IRFP460LC
IRFP460LC
Vishay Siliconix
MOSFET N-CH 500V 20A TO247-3
IRF644NPBF
IRF644NPBF
Vishay Siliconix
MOSFET N-CH 250V 14A TO220AB
STF21NM50N
STF21NM50N
STMicroelectronics
MOSFET N-CH 500V 18A TO220FP
NTD20N06G
NTD20N06G
onsemi
MOSFET N-CH 60V 20A DPAK
IRL3716STRRPBF
IRL3716STRRPBF
Infineon Technologies
MOSFET N-CH 20V 180A D2PAK
AOD425_001
AOD425_001
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 9A/50A TO252

Related Product By Brand

IDV15E65D2XKSA1
IDV15E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 15A TO220-2
BB 639 E7906
BB 639 E7906
Infineon Technologies
DIODE VAR CAP 30V 20MA SOD-323
IMW65R030M1HXKSA1
IMW65R030M1HXKSA1
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
SPP80N06S2-H5
SPP80N06S2-H5
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
IRF7406GTRPBF
IRF7406GTRPBF
Infineon Technologies
MOSFET P-CH 30V 5.8A 8SO
DDB6U134N16RRBOSA1
DDB6U134N16RRBOSA1
Infineon Technologies
IGBT MOD 1600V 70A 500W
TLE42994EV33XUMA1
TLE42994EV33XUMA1
Infineon Technologies
IC REG LIN 3.3V 150MA SSOP-14-2
IPA60R190C6
IPA60R190C6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
CYD09S36V18-167BBXC
CYD09S36V18-167BBXC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 256FBGA
CY7C1371DV33-133AXI
CY7C1371DV33-133AXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
CY8C3666AXA-052T
CY8C3666AXA-052T
Infineon Technologies
IC MCU 8BIT 64KB FLASH 100TQFP
CY90F474HPMC-GE1
CY90F474HPMC-GE1
Infineon Technologies
IC MEM MM MCU 100LQFP