IRF3808STRRPBF
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Infineon Technologies IRF3808STRRPBF

Manufacturer No:
IRF3808STRRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF3808STRRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 106A D2PAK
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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Similar Products

Part Number IRF3808STRRPBF IRF3708STRRPBF   IRF3808STRLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 30 V 75 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) 62A (Tc) 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.8V, 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V 12mOhm @ 15A, 10V 7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 24 nC @ 4.5 V 220 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5310 pF @ 25 V 2417 pF @ 15 V 5310 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 87W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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