IRF3717PBF
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Infineon Technologies IRF3717PBF

Manufacturer No:
IRF3717PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3717PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 20A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF3717PBF IRF3710PBF   IRF3711PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 100 V 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 57A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V 23mOhm @ 28A, 10V 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 130 nC @ 10 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 10 V 3130 pF @ 25 V 2980 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 200W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole
Supplier Device Package 8-SO TO-220AB TO-220AB
Package / Case 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-220-3

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