IRF3711PBF
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Infineon Technologies IRF3711PBF

Manufacturer No:
IRF3711PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3711PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 110A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF3711PBF IRF3711ZPBF   IRF3711SPBF   IRF3717PBF   IRF3710PBF   IRF3711LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 100 V 20 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 92A (Tc) 110A (Tc) 20A (Ta) 57A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V 6mOhm @ 15A, 10V 6mOhm @ 15A, 10V 4.4mOhm @ 20A, 10V 23mOhm @ 28A, 10V 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.45V @ 250µA 3V @ 250µA 2.45V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 24 nC @ 4.5 V 44 nC @ 4.5 V 33 nC @ 4.5 V 130 nC @ 10 V 44 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 10 V 2150 pF @ 10 V 2980 pF @ 10 V 2890 pF @ 10 V 3130 pF @ 25 V 2980 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 79W (Tc) 3.1W (Ta), 120W (Tc) 2.5W (Ta) 200W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D2PAK 8-SO TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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