IRF3710ZPBF
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Infineon Technologies IRF3710ZPBF

Manufacturer No:
IRF3710ZPBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF3710ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 59A TO220AB
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF3710ZPBF IRF3710ZSPBF   IRF3711ZPBF   IRF3710LPBF   IRF3710PBF   IRF3710SPBF   IRF3710ZGPBF   IRF3710ZLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key Obsolete Obsolete Active Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 20 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc) 59A (Tc) 92A (Tc) 57A (Tc) 57A (Tc) 57A (Tc) 59A (Tc) 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V 18mOhm @ 35A, 10V 6mOhm @ 15A, 10V 23mOhm @ 28A, 10V 23mOhm @ 28A, 10V 23mOhm @ 28A, 10V 18mOhm @ 35A, 10V 18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2.45V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V 24 nC @ 4.5 V 130 nC @ 10 V 130 nC @ 10 V 130 nC @ 10 V 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V 2150 pF @ 10 V 3130 pF @ 25 V 3130 pF @ 25 V 3130 pF @ 25 V 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 160W (Tc) 160W (Tc) 79W (Tc) 200W (Tc) 200W (Tc) 200W (Tc) 160W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-262 TO-220AB D2PAK TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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