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| Part Number | IRF3710STRLPBF | IRF3710ZSTRLPBF | IRF3710STRRPBF | IRF3711STRLPBF | IRF3610STRLPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Last Time Buy | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 20 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) | 59A (Tc) | 57A (Tc) | 110A (Tc) | 103A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V | 18mOhm @ 35A, 10V | 23mOhm @ 28A, 10V | 6mOhm @ 15A, 10V | 11.6mOhm @ 62A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 3V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 120 nC @ 10 V | 130 nC @ 10 V | 44 nC @ 4.5 V | 150 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 25 V | 2900 pF @ 25 V | 3130 pF @ 25 V | 2980 pF @ 10 V | 5380 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 200W (Tc) | 160W (Tc) | 200W (Tc) | 3.1W (Ta), 120W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK | D2PAK | D2PAK | D2PAK | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
