IRF3710SPBF
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Infineon Technologies IRF3710SPBF

Manufacturer No:
IRF3710SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3710SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 57A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF3710SPBF IRF3710ZPBF   IRF3710ZSPBF   IRF3711SPBF   IRF3610SPBF   IRF3710LPBF   IRF3710PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Obsolete Discontinued at Digi-Key Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 20 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) 59A (Tc) 59A (Tc) 110A (Tc) 103A (Tc) 57A (Tc) 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 28A, 10V 18mOhm @ 35A, 10V 18mOhm @ 35A, 10V 6mOhm @ 15A, 10V 11.6mOhm @ 62A, 10V 23mOhm @ 28A, 10V 23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 3V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 120 nC @ 10 V 120 nC @ 10 V 44 nC @ 4.5 V 150 nC @ 10 V 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3130 pF @ 25 V 2900 pF @ 25 V 2900 pF @ 25 V 2980 pF @ 10 V 5380 pF @ 25 V 3130 pF @ 25 V 3130 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 200W (Tc) 160W (Tc) 160W (Tc) 3.1W (Ta), 120W (Tc) 333W (Tc) 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK TO-220AB D2PAK D2PAK PG-TO263-3 TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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