IRF3709ZPBF
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Infineon Technologies IRF3709ZPBF

Manufacturer No:
IRF3709ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3709ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 87A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRF3709ZPBF IRF3709ZSPBF   IRF3704ZPBF   IRF3707ZPBF   IRF3709LPBF   IRF3709PBF   IRF3709SPBF   IRF3709ZLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 87A (Tc) 87A (Tc) 67A (Tc) 59A (Tc) 90A (Tc) 90A (Tc) 90A (Tc) 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 21A, 10V 6.3mOhm @ 21A, 10V 7.9mOhm @ 21A, 10V 9.5mOhm @ 21A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA 2.55V @ 250µA 2.25V @ 25µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V 26 nC @ 4.5 V 13 nC @ 4.5 V 15 nC @ 4.5 V 41 nC @ 5 V 41 nC @ 5 V 41 nC @ 5 V 26 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 15 V 2130 pF @ 15 V 1220 pF @ 10 V 1210 pF @ 15 V 2672 pF @ 16 V 2672 pF @ 16 V 2672 pF @ 16 V 2130 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 79W (Tc) 79W (Tc) 57W (Tc) 57W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262 TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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