IRF3709STRLPBF
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Infineon Technologies IRF3709STRLPBF

Manufacturer No:
IRF3709STRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF3709STRLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF3709STRLPBF IRF3709STRRPBF   IRF3709ZSTRLPBF   IRF3704STRLPBF   IRF3706STRLPBF   IRF3707STRLPBF   IRF3708STRLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 20 V 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 87A (Tc) 77A (Tc) 77A (Tc) 62A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 41 nC @ 5 V 26 nC @ 4.5 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2672 pF @ 16 V 2130 pF @ 15 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V 2417 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc) 79W (Tc) 87W (Tc) 88W (Tc) 87W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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