IRF3709SPBF
  • Share:

Infineon Technologies IRF3709SPBF

Manufacturer No:
IRF3709SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3709SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
526

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3709SPBF IRF3709ZPBF   IRF3709ZSPBF   IRF3704SPBF   IRF3706SPBF   IRF3707SPBF   IRF3708SPBF   IRF3709LPBF   IRF3709PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 20 V 20 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 87A (Tc) 87A (Tc) 77A (Tc) 77A (Tc) 62A (Tc) 62A (Tc) 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 26 nC @ 4.5 V 26 nC @ 4.5 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±20V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2130 pF @ 15 V 2130 pF @ 15 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V 2672 pF @ 16 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 79W (Tc) 79W (Tc) 87W (Tc) 88W (Tc) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK TO-220AB D2PAK D2PAK D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

Related Product By Categories

SPD04N80C3ATMA1
SPD04N80C3ATMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO252-3
IRF7465TRPBF
IRF7465TRPBF
Infineon Technologies
MOSFET N-CH 150V 1.9A 8SO
FDP80N06
FDP80N06
onsemi
MOSFET N-CH 60V 80A TO220-3
FDI9406-F085
FDI9406-F085
Fairchild Semiconductor
FDI9406 - N-CHANNEL POWERTRENCH
FDP120N10
FDP120N10
onsemi
MOSFET N-CH 100V 74A TO220-3
BSO201SPHXUMA1
BSO201SPHXUMA1
Infineon Technologies
MOSFET P-CH 20V 12A 8DSO
TK25E60X,S1X
TK25E60X,S1X
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 25A TO220
IRFH8330TRPBF
IRFH8330TRPBF
Infineon Technologies
MOSFET N-CH 30V 17A/56A PQFN
IPP048N04NGXKSA1
IPP048N04NGXKSA1
Infineon Technologies
MOSFET N-CH 40V 70A TO220-3
IRF720L
IRF720L
Vishay Siliconix
MOSFET N-CH 400V 3.3A I2PAK
RJL5020DPK-00#T0
RJL5020DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 500V 38A TO3P
RS3E095BNGZETB
RS3E095BNGZETB
Rohm Semiconductor
MOSFET N-CHANNEL 30V 9.5A 8SOP

Related Product By Brand

BBY5305WE6327
BBY5305WE6327
Infineon Technologies
VARIABLE CAPACITANCE DIODE
BCR 148W H6433
BCR 148W H6433
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
IPSA70R360P7SAKMA1
IPSA70R360P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 12.5A TO251-3
IPB036N12N3GATMA1
IPB036N12N3GATMA1
Infineon Technologies
MOSFET N-CH 120V 180A TO263-7
FP100R06KE3B16BOSA1
FP100R06KE3B16BOSA1
Infineon Technologies
IGBT MODULE
IR2233STRPBF
IR2233STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
CY2545QC020T
CY2545QC020T
Infineon Technologies
IC MULTI/CLOCK GENERATOR 24QFN
CY9BF517TBGL-GK7E1
CY9BF517TBGL-GK7E1
Infineon Technologies
IC MCU 32BIT 768KB FLASH 192FBGA
MB90347APFV-G-114E1
MB90347APFV-G-114E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB96F347RSBPQC-GSE2
MB96F347RSBPQC-GSE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 100PQFP
CY7C1324H-133AXC
CY7C1324H-133AXC
Infineon Technologies
IC SRAM 2MBIT PARALLEL 100TQFP
FM25V20-DGTR
FM25V20-DGTR
Infineon Technologies
IC FRAM 2MBIT SPI 40MHZ 8TDFN