IRF3709PBF
  • Share:

Infineon Technologies IRF3709PBF

Manufacturer No:
IRF3709PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF3709PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.57
1,235

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3709PBF IRF3709ZPBF   IRF3709SPBF   IRF3703PBF   IRF3704PBF   IRF3706PBF   IRF3707PBF   IRF3708PBF   IRF3709LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 20 V 20 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 87A (Tc) 90A (Tc) 210A (Tc) 77A (Tc) 77A (Tc) 62A (Tc) 62A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 7V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 2.8mOhm @ 76A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 26 nC @ 4.5 V 41 nC @ 5 V 209 nC @ 10 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±12V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2130 pF @ 15 V 2672 pF @ 16 V 8250 pF @ 25 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 79W (Tc) 3.1W (Ta), 120W (Tc) 3.8W (Ta), 230W (Tc) 87W (Tc) 88W (Tc) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

SIHG80N60E-GE3
SIHG80N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 80A TO247AC
FDS6676
FDS6676
Fairchild Semiconductor
SMALL SIGNAL N-CHANNEL MOSFET
IPP65R190CFDXKSA2
IPP65R190CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 17.5A TO220-3
SI8824EDB-T2-E1
SI8824EDB-T2-E1
Vishay Siliconix
MOSFET N-CH 20V 2.1A MICROFOOT
IPD70R1K4P7SAUMA1
IPD70R1K4P7SAUMA1
Infineon Technologies
MOSFET N-CH 700V 4A TO252-3
PSMN1R0-30YLDX
PSMN1R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BSC0804LSATMA1
BSC0804LSATMA1
Infineon Technologies
MOSFET N-CH 100V 40A TDSON-8-6
PJQ5426_R2_00001
PJQ5426_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
DMP31D7LW-13
DMP31D7LW-13
Diodes Incorporated
MOSFET BVDSS: 25V-30V SOT323
FDMS8670S
FDMS8670S
Fairchild Semiconductor
MOSFET N-CH 30V 20A/42A 8PQFN
IRFL214
IRFL214
Vishay Siliconix
MOSFET N-CH 250V 790MA SOT223
NTA4153NT1
NTA4153NT1
onsemi
MOSFET N-CH 20V 915MA SC75

Related Product By Brand

HFA08TB60PBF
HFA08TB60PBF
Infineon Technologies
DIODE GEN PURP 600V 8A TO220AC
SMBT 3904U E6327
SMBT 3904U E6327
Infineon Technologies
TRANS 2NPN 40V 0.2A SC74-6
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1
Infineon Technologies
MOSFET N-CH 100V 11.4/90A 8TDSON
IPU80R2K8CEBKMA1
IPU80R2K8CEBKMA1
Infineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
FS300R12OE4B81BPSA1
FS300R12OE4B81BPSA1
Infineon Technologies
MEDIUM POWER ECONO
ICE3B3565I
ICE3B3565I
Infineon Technologies
IC OFFLINE SWITCH FLYBACK TO220
CY90F038SPQCR-GS-SPE2
CY90F038SPQCR-GS-SPE2
Infineon Technologies
IC MCU FLASH MICOM-0.35 100QFP
MB90F347CEPMC-G-SNE1
MB90F347CEPMC-G-SNE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB91F016APFV-GS-9016K5E1
MB91F016APFV-GS-9016K5E1
Infineon Technologies
IC MCU 144LQFP
MB90561APMC-G-417E1
MB90561APMC-G-417E1
Infineon Technologies
IC MCU 16BIT 32KB MROM 64LQFP
S29GL064N90FAI020
S29GL064N90FAI020
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA
IS29GL01GS-11DHB02
IS29GL01GS-11DHB02
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA