IRF3709PBF
  • Share:

Infineon Technologies IRF3709PBF

Manufacturer No:
IRF3709PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRF3709PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.57
1,235

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3709PBF IRF3709ZPBF   IRF3709SPBF   IRF3703PBF   IRF3704PBF   IRF3706PBF   IRF3707PBF   IRF3708PBF   IRF3709LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 20 V 20 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 87A (Tc) 90A (Tc) 210A (Tc) 77A (Tc) 77A (Tc) 62A (Tc) 62A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 7V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 2.8mOhm @ 76A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 26 nC @ 4.5 V 41 nC @ 5 V 209 nC @ 10 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±12V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2130 pF @ 15 V 2672 pF @ 16 V 8250 pF @ 25 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 79W (Tc) 3.1W (Ta), 120W (Tc) 3.8W (Ta), 230W (Tc) 87W (Tc) 88W (Tc) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

2N7002-HF
2N7002-HF
Comchip Technology
MOSFET N-CH 60V 250MA SOT23
IXTA1R4N100P
IXTA1R4N100P
IXYS
MOSFET N-CH 1000V 1.4A TO263
FQP6N80C
FQP6N80C
onsemi
MOSFET N-CH 800V 5.5A TO220-3
GPIHV30DFN
GPIHV30DFN
GaNPower
GANFET N-CH 1200V 30A DFN8X8
BSP317PH6327XTSA1
BSP317PH6327XTSA1
Infineon Technologies
MOSFET P-CH 250V 430MA SOT223-4
STF40NF20
STF40NF20
STMicroelectronics
MOSFET N-CH 200V 40A TO220FP
IRFI720GPBF
IRFI720GPBF
Vishay Siliconix
MOSFET N-CH 400V 2.6A TO220-3
FCP190N65F
FCP190N65F
onsemi
MOSFET N-CH 650V 20.6A TO220-3
XP235N2001TR-G
XP235N2001TR-G
Torex Semiconductor Ltd
MOSFET N-CH 30V 2A SOT23
DMTH47M2LPSW-13
DMTH47M2LPSW-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
SIR670DP-T1-GE3
SIR670DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 60A PPAK SO-8
STW56N65M2-4
STW56N65M2-4
STMicroelectronics
MOSFET N-CH 650V 49A TO247-4L

Related Product By Brand

BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BCR119WE6327
BCR119WE6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF6620TR1PBF
IRF6620TR1PBF
Infineon Technologies
MOSFET N-CH 20V 27A DIRECTFET
SAK-TC297TA-128F300S BB
SAK-TC297TA-128F300S BB
Infineon Technologies
IC MICROCONTROLLER
BTS432E2E3062ABUMA1
BTS432E2E3062ABUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220AB
TLS203B0EJV50XUMA1
TLS203B0EJV50XUMA1
Infineon Technologies
IC REG LIN 5V 300MA 8DSO E-PAD
CY25812ZXC
CY25812ZXC
Infineon Technologies
IC CLOCK GEN 3.3V SS 8-TSSOP
MB90F394HAPMT-GS
MB90F394HAPMT-GS
Infineon Technologies
IC MCU 16BIT 384KB FLASH 120LQFP
MB91F482PMC-G-N2E1
MB91F482PMC-G-N2E1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 100LQFP
CY8C4248FNI-BL483T
CY8C4248FNI-BL483T
Infineon Technologies
IC MCU 32BIT 256KB FLASH 76WLCSP
CY7C1361S-133AXC
CY7C1361S-133AXC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP