IRF3709LPBF
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Infineon Technologies IRF3709LPBF

Manufacturer No:
IRF3709LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3709LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF3709LPBF IRF3709ZPBF   IRF3709PBF   IRF3709SPBF   IRF3709ZLPBF   IRF3704LPBF   IRF3706LPBF   IRF3707LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 87A (Tc) 90A (Tc) 90A (Tc) 87A (Tc) 77A (Tc) 77A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 26 nC @ 4.5 V 41 nC @ 5 V 41 nC @ 5 V 26 nC @ 4.5 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2130 pF @ 15 V 2672 pF @ 16 V 2672 pF @ 16 V 2130 pF @ 15 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 79W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc) 79W (Tc) 87W (Tc) 88W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-220AB TO-220AB D2PAK TO-262 TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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