IRF3709L
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Infineon Technologies IRF3709L

Manufacturer No:
IRF3709L
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3709L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 90A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2672 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF3709L IRF3709S   IRF3709ZL   IRF3704L   IRF3706L   IRF3707L   IRF3708L   IRF3709  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 20 V 20 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 87A (Tc) 77A (Tc) 77A (Tc) 62A (Tc) 62A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 6.3mOhm @ 21A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.25V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 41 nC @ 5 V 26 nC @ 4.5 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V 2672 pF @ 16 V 2130 pF @ 15 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 120W (Tc) 79W (Tc) 87W (Tc) 88W (Tc) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 D2PAK TO-262 TO-262 TO-262 TO-262 TO-262 TO-220AB
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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